This EV IGBT substrate is designed for high-performance electric vehicle applications, utilizing Active Metal Brazing (AMB) on Silicon Nitride (Si₃N₄) ceramic. Renowned for its high thermal conductivity (~90 W/m·K : ≈ 0.216 cal/cm·s·°C) and mechanical strength (>800 MPa : ≈ 116,000 psi), Si₃N₄ ensures excellent thermal management and structural integrity, even under extreme operating conditions.
The substrate includes a 300 μm-thick copper layer (300 μm : 0.3 mm : 11.81 mil : 11,811 μin : ≈ 8.5 oz/ft²), optimized with a minimum line width of 1.0 mm (1.0 mm : 1000 μm : 39.37 mil : 0.0394 inch) and minimum line spacing of 0.8 mm (0.8 mm : 800 μm : 31.5 mil : 0.0315 inch).
The surface is plated with 3 μm of Nickel (3 μm : 0.003 mm : 118.1 μin), 0.05 μm of Palladium (0.05 μm : 0.00005 mm : 1.97 μin), and 0.05 μm of Gold (0.05 μm : 0.00005 mm : 1.97 μin), offering outstanding bonding reliability, oxidation resistance, and durability for wire bonding or soldering applications.
It passes 5,000 cycles of thermal shock tests (–40 °C to +150 °C : –40 °F to +302 °F) without microcracking, proving its stability in demanding automotive environments
