, ,

INV-DBC-ALO-Cu8.5 oz-LS40 mil-Ni120μ”-Au2μ”-VR5kV

  • Application: Photovoltaic Inverters / IGBT Power Modules

  • Process: Direct Bonded Copper (DBC)

  • Substrate Material: Alumina (Al₂O₃)

  • Copper Thickness: 300 μm ≈ 8.57 oz/ft²11.8 mil

  • Line Width / Spacing: 1.0 mm / 0.5 mm ≈ 39.4 mil / 19.7 mil

  • Surface Finish: Nickel 3 μm (118.1 μin) + Gold 0.05 μm (2 μin)

  • Thermal Conductivity: ~24 W/m·K

  • Dielectric Strength: 5000V

Guaranteed Safe Checkout

This IGBT module substrate is specially designed for photovoltaic inverter applications. Manufactured using Direct Bonded Copper (DBC) technology on Alumina (Al₂O₃) ceramic, it provides a high-reliability solution with excellent thermal and electrical performance.

The substrate features 8.5oz thick copper for superior current handling and thermal conductivity. With a minimum line width of 40 mil and a minimum spacing of 20 mil, it supports high-density circuit layouts while maintaining electrical insulation. The copper layer is plated with 120 μ” of Nickel and 2 μ” of Gold, ensuring excellent bondability and resistance to corrosion and oxidation.

It also provides a dielectric withstand voltage of up to 5000V, making it ideal for high-voltage environments such as solar inverters and energy storage systems.