This IGBT power module adopts Direct Bonded Copper (DBC) technology and is packaged on an alumina (Al₂O₃) ceramic substrate, offering a reliable, efficient, and cost-effective solution for power electronics applications. The base layer integrates 8.5 oz of copper, ensuring high current-carrying capacity and thermal performance. The copper is directly bonded to the ceramic surface endpoints, resulting in superior short-circuit protection and fault-tolerant structure.
With a minimum dielectric spacing of 78.74 mil, the module is well-suited for high-voltage isolation requirements. The copper surface is plated with 118.1 μ” (approximately 3 μm) of nickel and 1.97 μ” (0.05 μm) of gold, providing enhanced corrosion resistance and ensuring instantaneous and stable wire bonding.
This substrate offers excellent dielectric strength up to 5000V, meeting the insulation demands of high-voltage IGBT module designs.
