This IGBT power substrate is manufactured using Active Metal Brazing (AMB) technology with a silicon nitride (Si₃N₄) ceramic base. It offers exceptional mechanical strength, high thermal conductivity, and excellent electrical insulation, making it ideal for handling high current loads in harsh operating environments.
The substrate features a 300 μm (11.81 mil / 8.62 oz/ft²) thick copper layer that enables stable and efficient power transmission. With a minimum line width of 1.5 mm (59.06 mil) and a minimum spacing of 0.5 mm (19.69 mil), it supports compact circuit layouts—perfect for high-density module packaging.
The copper surface is plated with 3 μm (118.1 μin) of nickel and 0.1 μm (3.94 μin) of gold, ensuring excellent oxidation resistance, solderability, and long-term reliability under thermal cycling condition
