This high-performance power substrate is built on 1.0 mm (39.37 mil) thick silicon nitride (Si₃N₄) ceramic, known for its exceptional thermal conductivity, mechanical strength, and insulation properties. Engineered for high-reliability and high-density power applications, it employs a metal-filled via process, enabling robust vertical electrical interconnections between the top and bottom copper layers.
The copper conductor layers are 200 μm thick, equivalent to 7.87 mil or approximately 5.88 oz/ft², providing high current-carrying capability and excellent thermal dissipation. This double-sided design is ideal for power modules and compact power converters, where space efficiency and thermal management are critical.
