This high-performance aluminum nitride (AlN) ceramic substrate is manufactured using Active Metal Brazing (AMB) technology. Designed with a double-layer structure, it offers robust electrical interconnection and high thermal conductivity, making it an ideal choice for power semiconductor modules.
The substrate has a thickness of 0.635 mm (25 mil), with copper layers of 200 μm (≈7.87 mil, approx. 5.8 oz/ft²) on both sides. The copper surfaces are double-side polished to ensure excellent flatness and high bondability, suitable for high-power applications.
With compact dimensions of 40.95 mm × 21.4 mm, this substrate is especially well-suited for automotive and industrial IGBT modules or other applications requiring high reliability and thermal performance.
