Advanced IGBT Ceramic Substrate with AMB Technology
(Aluminum Nitride | High Current Capacity | Multi-Layer Plating)
This advanced IGBT ceramic substrate is manufactured using the Active Metal Brazing (AMB) process on a high thermal conductivity aluminum nitride (AlN) ceramic base. It features a thick 300 μm (11.81 mil / ~8.82 oz/ft²) copper layer, designed to support high current-carrying applications with excellent thermal dissipation.
The circuit layout supports a minimum line width of 1.0 mm (39.37 mil) and minimum line spacing of 0.5 mm (19.69 mil), ensuring reliable signal and power integrity in compact and high-density IGBT module designs.
To improve solderability, bondability, and corrosion resistance, the copper surface is finished with a multi-layer plating as follows:
Nickel (Ni): 3 μm = 118.1 μinch
Palladium (Pd): 0.05 μm = 1.97 μinch
Gold (Au): 0.1 μm = 3.94 μinch
This surface treatment enhances bonding performance for power semiconductor devices and contributes to long-term reliability under harsh working conditions.
