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GEN-AMB-ALN-Cu5.9oz-T25mil-DSPol

  • Substrate Material: Aluminum Nitride (AlN)

  • Manufacturing Process: AMB (Active Metal Brazing)

  • Structure: 2-layer, double-sided copper

  • Board Thickness: 0.635 mm (25 mil)

  • Copper Thickness: 200 μm (7.87 mil, approx. 5.9 oz per ft²)

  • Surface Finish: Double-side polished copper

  • Board Dimensions: 40.95 mm × 21.4 mm (≈1613 mil × 843 mil)

  • Applications: High-power and compact electronic modules requiring superior thermal conductivity and electrical insulation

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This product is a high-performance ceramic copper-clad board manufactured using the Active Metal Brazing (AMB) process on Aluminum Nitride (AlN) ceramic. The board features double-side polished copper surfaces, ensuring excellent electrical conductivity and surface smoothness.

It consists of a 2-layer structure with a total thickness of 0.635 mm (25 mil) and 200 μm (7.87 mil / approx. 5.9 oz) thick copper on each side, making it ideal for high current applications.

With precise dimensions of 40.95 mm × 21.4 mm (≈1613 mil × 843 mil), this board is highly suitable for compact electronic modules that demand efficient heat dissipation, electrical insulation, and mechanical reliability.