This miniature IGBT power substrate is manufactured using Active Metal Brazing (AMB) technology on silicon nitride (Si₃N₄) ceramic, offering outstanding thermal conductivity (~90 W/m·K), exceptional mechanical strength (>800 MPa or approximately 116,000 psi), and excellent electrical insulation. It is specifically engineered for compact IGBT modules and high-voltage power electronics applications.
The substrate features a 300 μm (0.3 mm / 11.81 mil / 11,811 μin / ~8.5 oz/ft²) copper layer, with a minimum line width of 1.0 mm (1000 μm / 39.37 mil / 0.0394 inch) and minimum line spacing of 3.0 mm (3000 μm / 118.11 mil / 0.1181 inch). This design ensures compliance with high-voltage isolation standards while maintaining current integrity.
The copper surface is plated with 3 μm (118.11 μin) of nickel and 0.05 μm (1.97 μin) of gold, providing excellent corrosion resistance, solderability, and wire bonding performance. With a dielectric withstand voltage of up to 10,000V, this substrate is well-suited for demanding electrical environments.
