TEC-DPC-ALN-T5.9mil-Cu0.56 oz-LS3.94μ''/1.97mil-Ni118μ''-Ti3.94μ''-Au6.69μ''

TEC-DPC-ALN-T5.9mil-Cu0.56 oz-LS3.94μ”/1.97mil-Ni118μ”-Ti3.94μ”-Au6.69μ”

Substrate Material: Aluminum Nitride (AlN)
Substrate Thickness: 0.15 mm (5.91 mil)
Copper Thickness: 20 μm (0.79 mil / ~0.56 oz/ft²)
Surface Finish:
- Nickel (Ni): 3 μm (118.1 μinch)
- Palladium (Pd): 0.1 μm (3.94 μinch)
- Gold (Au): 0.17 μm (6.69 μinch)
Minimum Line Width: 0.1 mm (3.94 mil)
Minimum Line Spacing: 0.05 mm (1.97 mil)
Process: Direct Plated Copper (DPC)
Application: Micro TEC modules, sensors, precision thermal control
Advantages:
- Ultra-fine line resolution for dense routing
- High thermal conductivity with minimal thickness
- Excellent bonding and anti-corrosion performance
- Ideal for compact, high-reliability thermal systems

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Ultra-Fine Line TEC Ceramic Substrate for Micro-Device Integration

This ceramic substrate is engineered for next-generation thermoelectric cooling (TEC) modules and micro-device integration, utilizing high-density DPC (Direct Plated Copper) technology to achieve ultra-precise circuit patterns with superior thermal management.

Built on a 0.15 mm (5.91 mil) thick Aluminum Nitride (AlN) substrate, this board offers excellent thermal conductivity and electrical insulation in an ultra-thin profile, ideal for compact and high-performance device packaging.

The circuit features ultra-fine line capability, with:

Line width of 0.1 mm (3.94 mil)
Line spacing of 0.05 mm (1.97 mil)

This fine resolution allows for high-density routing, supporting advanced microelectronic designs that demand tight tolerances, reduced parasitic effects, and miniaturization.